WPM2015 single p-channel, -20v, -2.4a, power mosfet descriptions the WPM2015 is p-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power switch and charging circuit. standard product WPM2015 is pb-free and halogen-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot-23 applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging sot-23 pin configuration (top view) wt1* wt1= device code * = month (a~z) marking order information device package shipping WPM2015-3/tr sot-23 3000/reel&tape v ds (v) rds(on) (
) 0.081@ v gs = 4.5v -20 0.103@ v gs = 2.5v d 3 gs 12 3 2 1 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds -20 gate-source voltage v gs f 8 v t a =25c -2.4 -2.2 continuous drain current a t a =70c i d -1.9 -1.7 a t a =25c 0.9 0.8 maximum power dissipation a t a =70c p d 0.5 0.5 w t a =25c -2.2 -2.0 continuous drain current b t a =70c i d -1.7 -1.6 a t a =25c 0.7 0.6 maximum power dissipation b t a =70c p d 0.5 0.4 w pulsed drain current c i dm -10 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t ? 10 s 105 135 junction-to-ambient thermal resistance a steady state r ja 120 155 t ? 10 s 130 160 junction-to-ambient thermal resistance b steady state r ja 145 190 junction-to-case thermal resistance steady state r jc 60 75 c/w a surface mounted on fr-4 board using 1 square inch pad size, 1oz copper b surface mounted on fr-4 board using minimum pad size, 1oz copper c pulse width<380s, duty cycle<2% d maximum junction temperature t j =150c. WPM2015 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = -250ua -20 v zero gate voltage drain current i dss v ds = -16v, v gs = 0v -1 ua gate-to-source leakage current i gss v ds = 0 v, v gs = f 8v f 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = -250ua -0.40 -0.62 -0.81 v v gs = -4.5v, i d = -2.7a 81 110 drain-to-source on-resistance b, c r ds(on) v gs = -2.5v, i d = -2.2a 103 150 m ? capacitances, charges input capacitance c iss 534 output capacitance c oss 62 reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = -10 v 54 pf total gate charge q g(tot) 7.3 threshold gate charge q g(th) 0.5 gate-to-source charge q gs 1.25 gate-to-drain charge q gd v gs = -4.5 v, v ds = -10 v, i d = -2.7a 1.15 nc switching characteristics turn-on delay time td(on) 8.0 rise time tr 6.4 turn-off delay time td(off) 41.0 fall time tf v gs = -4.5 v, v ds = -10 v, i d =-1.2a, r g =6 ? 7.0 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = -0.9a -0.74 -1.5 v WPM2015 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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